PART |
Description |
Maker |
MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola Semiconductor Motorola, Inc.
|
2SK904 2SK1212 2SK1663 2SK2079 2SK1553 2SK1105 |
(2SKxxxx) MOSFETs
|
Fuji Semiconductors
|
2SK1385 2SK1021 2SK953 2SK1171 2SK1211 2SK1224 2SK |
(2SKxxxx) Power MOSFET
|
Fuji Semiconductors
|
MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
AH478 AH478Z5-BE1 AH478Z5-BG1 |
SINGLE PHASE HALL EFFECT LATCH WITH LOCKED PROTECTION MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-95 MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-95
|
BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing, Ltd.
|
HAL508UA-A HAL523SF-A HAL523SF-K HAL516SF-A HAL516 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -2.3-2.3mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT MAGNETIC FIELD SENSOR-HALL EFFECT, 20.7-13.5mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT PLASTIC, TO-92UA-1, 3 PIN Hall-Effect Sensor Family
|
Micronas Semiconductor Holding AG
|
2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
AH276Q-PG-B-A AH276Q-PG-B-B AH276Q-PG-B-C AH276Q-P |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4 MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
|
Diodes Incorporated http:// Diodes, Inc.
|
AH477A AH477AZ4-AG1 AH477AZ4-BG1 |
SINGLE PHASE HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4
|
BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing, Ltd.
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|